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Korobko, Roman, Dr.
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ETH Zürich
Dr. Roman Korobko
Professur Elektrochem. Materialien
HPP P 23
Hönggerbergring 64
8093 Zuerich
Switzerland
Fax: +41 44 633 12 49 E-Mail:
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Education
Ph.D. in Chemistry, Department of Materials and Interfaces, the Faculty of Chemistry, Weizmann Institute of Science, Israel, 2014.
Control of elastic properties of ceramics by external electric field
M.Sc. in Chemistry, Department of Materials and Interfaces, the Faculty of Chemistry, Weizmann Institute of Science, Israel, 2009.
Permanent Electrical Contacts to Organic Molecular Monolayers for Metal-Molecules-Semiconductor Junctions
B.A. in Chemistry, B.Sc. in Materials Engineering, the Faculty of Materials Engineering
Technion - Israel Institute of Technology, Israel, 2003.
Publications
- Lazovski, G.; Kraynis, O.; Korobko, R.; Wachtel, E.; Lubomirsky, I.
Optical investigation of oxygen diffusion in thin films of Gd-doped ceria
Solid State Ionics, 277, 30 (2015)
- Korobko, R.; Lerner, A.; Li, Y.; Wachtel, E.; Frenkel, A.I.; Lubomirsky, I.
In-situ extended X-ray absorption fine structure study of electrostriction in Gd doped ceria
Applied Physics Letters, 106, 4, 042904 (2015)
- Korobko, R.; Kim S. K.; Kim, S.; Cohen, S. R.; Wachtel, E.; Lubomirsky, I.
The role of point defects in the mechanical behavior of doped ceria probed by nanoindentation
Advanced Functional Materials, 23, 48, 6076 (2013)
- Korobko, R.; Wachtel, E.; Lubomirsky, I.
Cantilever Resonator Based on the Electrostriction Effect in Gd-Doped Ceria
Sensor Actuat. A-Phys, 201, 73 (2013)
- Kossoy, A.; Wang, Q.; Korobko, R.; Grover, V.; Feldman, Y.; Wachtel, E.; Tyagi, A. K.; Frenkel, A. I.; Lubomirsky, I.
Evolution of the local structure at the phase transition in CeO2-Gd2O3 solid solutions", Phys. Rev. B 2013, 87, 054101.
Phys. Rev. B, 87, 054101. (2013)
- Korobko, R.; Patlolla, A.; Kossoy, A.; Wachtel, E.; Tuller, H.L.; Frenkel, A.I.; Lubomirsky, I.
Giant Electrostriction in Gd-Doped Ceria
Advanced Materials, 24, 43, 6076 (2012)
- Korobko, R.; Chen, C.-T.; Kim, S.; Cohen, S.R.; Wachtel, E.; Yavo, N.; Lubomirsky, I.
Influence of Gd content on the room temperature mechanical properties of Gd-doped ceria
Scripta Materialia, 66, 155 (2012)
- Stein, N.; Korobko, R.; Yaffe, O.; Har-Lavan, R.; Shpaisman, H.; Tirosh, E.; Vilan, A.; Cahen, D.
Nondestructive Contact Deposition for Molecular Electronics: Si-Alkyl//Au Junctions
J. Phys. Chem. C, 114, 12769 (2010)
- Shpaisman, H.; Har-Lavan, R.; Stein, N.; Yaffe, O.; Korobko, R.; Seitz, O.; Vilan, A.; Cahen, D.
Electronic Contact Deposition onto Organic Molecular Monolayers: Can We Detect Metal Penetration?
Advanced Functional Materials, 20, 13, 2181 (2010)
- Kossoy, A.; Feldman, Y.; Korobko, R.; Wachtel, E.; Lubomirsky, I.; Maier, J.
Influence of Point-Defect Reaction Kinetics on the Lattice Parameter of Ce0.8Gd0.2O1.9
Advanced Functional Materials, 19, 4, 634 (2009)
Patents
- Lubomirsky I., Korobko R., Kossoy A., Tuller H.L.
Electromechanical effect in cerium based oxides
WO2012046234, 2011.
Fellowships, Awards and Honors
- ACTA Student Award, 2012 Scripta Materialia journal, 2013
- Graduate Student Award, E-MRS 2013 Spring, Strasbourg, France, 2013
- BSF Travel Grant for Young Scientists, 2011
- Poster award, Solid State Ionics 18 conference, Warsaw, Poland, 2011
- Cum Laude, B.A. & B.Sc., Technion – Israel Institute of Technology, 2003
Research
Multiterminal memristive devices – benefits of anisotropy
Main Scientific questions:
- Can 4-terminal devices shed light on memristive mechanisms in different materials, when electroforming is spatially/directionally separated from read terminals?
- Can 4-terminal devices reveal functionalities of memristors: Can one write perpendicular to read? Is it possible to "gate" the memristor?
Methods:
Progress:
A sample after 2 photolithography steps and one PLD:
Engineering a novel resistive switching device-type based on synergy between metal oxides with different functionality
The idea is to combine several metal oxides with different functionality in order to achieve superior synergetic memristive properties. The preliminary results of vanadium oxide/gadolinium-doped ceria bilayers open new opportunities for intelligent design.
Representative voltammogram of GDC/VOx devices with different thickness of the GDC layer.