Phone: +41 44 633 07 63
M.Sc. Technical Chemistry, Technical University Graz, Austria, 2011.
B.Sc. Chemistry, Technical University Graz, Austria, 2008.
Rupp, J.L.M.; Schweiger, S.; Messerschmitt, F.
Strained Multilayer Resistive-switching Memory Elements
Patent Application PCT/EP2014/001020: Priority: April 19, 2013 (pending)
Fellowships, Awards and Honors
Sebastian Schweiger is currently working on resistive switching memories, also called Resistive Random Access Memories (ReRAMs). This innovative device is a promising candidate to replace state of the art Flash and DRAM memories in the near future. In resistive switching memories different resistance states can be addressed and used for digital information storage. His major focus is on the improvement of resistive switches through the application of strained oxide multilayers as switching element. Furthermore, the fundamentals behind strained multilayers and electro-chemo-mechanics are investigated and could also be used for other micro-solid state devices.
Microscope view-graphs of strained Gd0.1Ce0.9O2–δ/Er2O3 multilayer micro-dots and arrays on chip. a) Top view low magnification light microscopy image of an electrode array contacting through the sides islands of Gd0.1Ce0.9O2–δ/Er2O3 multilayer micro-dots on chip. Tungsten needles were used for electrical contacting of the Pt-side contacts. b) High magnification light microscopy image of Pt electrodes contacting a structured multilayer thin film dot (top view). c) Schematic view graphic of a strained multilayer Gd0.1Ce0.9O2–δ/Er2O3 heterostructure. The electrodes that are attached to the side walls of the structure allow measuring the conductivity parallel to the strained Gd0.1Ce0.9O2–δ/Er2O3 interfaces. d) Side view and tilted 3D view for a micro-dot arranged between two metal electrodes by optical surface profilometry. Here, the scale bar refers to the horizontal width (aspect ratio is not to scale). The color bar indicates the measured heights. e) SEM cross-sectional view of a Gd0.1Ce0.9O2–δ/Er2O3 multilayer in a micro-dot. The left side shows a QBSD image and the right side shows a 50% QBSD and 50% In-lens detector image. In the QBSD image the bright contrast phase refers to the Er2O3(heavy mass) and the dark one to the Gd0.1Ce0.9O2–δ (light mass).
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