printlogo
http://www.ethz.ch/index_EN
Electrochemical Materials
 
print
  

Messerschmitt, Felix

Felix Messerschmitt

ETH Zürich
Felix Messerschmitt
Professorship Electrochemical Materials
HPP P22
Hönggerbergring 64
8093 Zurich
Switzerland

Phone: +41 44 633 04 98
Fax: +41 44 633 12 49
E-Mail: 

Education

M.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2011.
B.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2008.

Publications

Patents

Rupp, J.L.M.; Schweiger, S.; Messerschmitt, F.
Strained Multilayer Resistive-switching Memory Elements
Patent Application PCT/EP2014/001020: Priority: April 19, 2013 (pending)

Fellowships, Awards and Honors

Research

Felix Messerschmitt is currently working on resistive switching memories, also called Resistive Random Access Memories (ReRAMs). These non-volatile memory technology is a promising candidate to replace current transistor-based random access memories. The focus of this project focuses on a better understanding of the switching kinetics and mechanistics in perovskites (ABO3). Therefore the resistive switching of SrTixFeY1-xO3-δ as a model material system is investigated which allows to alter the band gap, carrier concentration and mobility to a broad extent.

ReRAM chips
ReRAM chips
ReRAM chips
ReRAM chips
 

Wichtiger Hinweis:
Diese Website wird in älteren Versionen von Netscape ohne graphische Elemente dargestellt. Die Funktionalität der Website ist aber trotzdem gewährleistet. Wenn Sie diese Website regelmässig benutzen, empfehlen wir Ihnen, auf Ihrem Computer einen aktuellen Browser zu installieren. Weitere Informationen finden Sie auf
folgender Seite.

Important Note:
The content in this site is accessible to any browser or Internet device, however, some graphics will display correctly only in the newer versions of Netscape. To get the most out of our site we suggest you upgrade to a newer browser.
More information

© 2017 ETH Zurich | Disclaimer | 19 May 2016
top