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Electrochemical Materials
 
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Schmitt, Rafael

Rafael Schmitt

ETH Zürich
Rafael Schmitt
Professorship Electrochemical Materials
HPP P12
Hönggerbergring 64
8093 Zurich
Switzerland

Phone: +41 44 633 08 65
Fax: +41 44 633 12 49
E-Mail: 

Education

M.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2013.
B.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2011.

Publications

Awards

Research

Rafael Schmitt is working on redox-based resistive switching for the application in non-volatile memories. This innovative type of Resistive Random Access Memory (ReRAM) is a promising candidate to replace current transistor-based random access memories. The investigated ReRAMs are consisting of binary oxide or perovskite thin films that are deposited using the Pulsed Laser Deposition (PLD) technique. The electrodes are processed in the clean room by means of microfabrication (photolithography).

His main focus is to realize multi-terminal resistive switches for a new type of nonvolatile logic circuits. In a further project, in collaboration with the Multifunctional Ferroic Materials group headed by Prof. Manfred Fiebig, he is investigating the relation between charge and mass transport and the band structure of oxides. Multilayers of different perovskites are epitaxially grown, characterized electrically and additionally analyzed by means of nonlinear laser optics. At a later stage, in-situ measurements combining the transport and spectroscopic measurements will be performed.

Surface morphology of ultraflat LFO-LNO bilayer on LAO
Surface morphology of ultraflat LFO-LNO bilayer on LAO
LAO-LNO-LFO memristor test structure
LAO-LNO-LFO memristor test structure
Multistack of ceria memristors
Multistack of ceria memristors
High magnification image of a three-terminal ceria-based memristor
High magnification image of a three-terminal ceria-based memristor
 

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