Electrochemical Materials
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Messerschmitt, Felix

Felix Messerschmitt

ETH Zürich
Felix Messerschmitt
Professorship Electrochemical Materials
Hönggerbergring 64
8093 Zurich

Phone: +41 44 633 04 98
Fax: +41 44 633 12 49


M.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2011.
B.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2008.



Rupp, J.L.M.; Schweiger, S.; Messerschmitt, F.
Strained Multilayer Resistive-switching Memory Elements
Patent Application PCT/EP2014/001020: Priority: April 19, 2013 (pending)

Fellowships, Awards and Honors


Felix Messerschmitt is currently working on resistive switching memories, also called Resistive Random Access Memories (ReRAMs). These non-volatile memory technology is a promising candidate to replace current transistor-based random access memories. The focus of this project focuses on a better understanding of the switching kinetics and mechanistics in perovskites (ABO3). Therefore the resistive switching of SrTixFeY1-xO3-δ as a model material system is investigated which allows to alter the band gap, carrier concentration and mobility to a broad extent.

ReRAM chips
ReRAM chips
ReRAM chips
ReRAM chips

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